Professor Rok-hyun Baek of POSTECH's Department of Electrical Engineering has signed a five-year research agreement with KEIT and COSAR under the Ministry of Trade, Industry and Energy, with KRW 220 million in annual funding, to study Gate-All-Around FETs and 3D integrated circuits.

The topic is “Proposal and Performance Optimization of 3DIC Structures Using 5 nm Node Gate-All-Around Devices and TSVs.” These technologies are attracting attention from Samsung, Intel, TSMC, Qualcomm, and other companies as the industry looks beyond Moore's Law, which has driven performance, power-efficiency, and integration advances for 40–50 years.

The Future Semiconductor Device Core Technology Development Program supports university research and specialist training through industry–university collaboration, aiming to establish global semiconductor leadership. It focuses on core device technologies with broad impact and medium- to long-term applicability.