POSTECH BK research teams develop foldable semiconductors for space using polyimide, a temperature-stable material known as spacesuit fiber. Reduced production costs and shorter synthesis processes improve commercialization prospects.

POSTECH researchers have developed foldable semiconductors that can operate reliably even in space, where temperatures change rapidly from −120°C to +150°C. Professor Oh-Hyun Kim, 53, of Electrical Engineering and the BK Future Information Technology group, Professor Moonhor Ree, 54, of Chemistry/Pohang Accelerator Laboratory and the BK Molecular Science group, and Dr. Seokgyu Hahm, 32, of Chemistry, successfully fabricated high-performance nonvolatile memory devices using polyimide polymers.

The fabrication technology, to be published on the 13th in the latest Advanced Functional Materials, uses polyimide as the active layer. Stable across −269°C to +400°C, the polymer enables use in space. Its excellent mechanical strength also allows it to serve as the substrate, greatly lowering fabrication costs. Synthesis is faster than for other organic materials previously used, shortening manufacturing time. Simple spin coating produces an active layer of the desired thickness, making mass production easier.

Polyimide semiconductors offer stable performance across temperatures and operate at under 2 V, which could support laptops lasting a month on one charge. The material is lightweight, easily bent, and suitable for high integration, offering applications in foldable electronic newspapers, e-books, electronic paper, foldable computers, and wearable computers. Its suitability for space also opens possibilities for entirely new types of future digital products.

Professor Ree, director of Pohang Accelerator Laboratory, said, “The greatest advantage over conventional silicon- or metal-oxide-based nonvolatile memory is a simpler manufacturing process and substantially shorter production time, potentially reducing manufacturing costs to one-tenth. This technology enables low-cost production of next-generation high-performance nonvolatile memory and could substantially accelerate commercialization.”